BSH111,215 datasheet

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Маркировка

BSH111,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BSH111,215 Channel Mode: Enhancement Configuration: Single Continuous Drain Current: 0.335 A Current - Continuous Drain (id) @ 25?° C: 335mA Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Drain-source On-res: 4Ohm Drain-source On-volt: 55V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 380 S Gate Charge (qg) @ Vgs: 1nC @ 10V Gate Charge Qg: 0.05 nC Gate-source Breakdown Voltage: +/- 10 V Gate-source Voltage (max): ?±10V ID_COMPONENTS: 1951731 Input Capacitance (ciss) @ Vds: 40pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Polarity: N Power - Max: 830mW Power Dissipation: 830 mW Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Type: Power MOSFET Vgs(th) (max) @ Id: 1.3V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 10 V Resistance Drain-Source RDS (on): 2.4 Ohms Forward Transconductance gFS (Max / Min): 380 S Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 11 ns Part # Aliases: BSH111 T/R Other Names: 568-1657-2, 934056036215, BSH111 T/R
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11 шт.
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